SI7940DP-T1-GE3

Overview

The SI7940DP-T1-GE3 is a dual N-channel MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in a PowerPAK-SO-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 60 V and a continuous drain current (Id) of 12 A. Its maximum on-resistance (Rds(on)) is specified at 55 mΩ. The gate-source voltage limits are defined as ±20 V, with a threshold voltage (Vgs(th)) of 2 V. Total gate charge (Qg) is 10 nC. The component supports an operating temperature range from -55 °C to +150 °C and has a power dissipation rating of 2.5 W.

Feature Summary

• Dual configuration integrating two independent N-channel enhancement-mode transistors within a single compact footprint.
• TrenchFET process technology designed to minimize on-resistance for improved conduction efficiency.
• PowerPAK-SO-8 package provides enhanced thermal performance and reduced parasitic inductance compared to standard SO-8 packages.

Applications

• DC-DC converter synchronous rectification stages
• Load switching applications requiring low on-resistance
• Battery protection circuits

Procurement Notes

Verify the specific suffix against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure that the ordering information matches the exact package variant and tape-and-reel specifications required for the assembly process. Cross-reference the RoHS compliance status with current regulatory requirements before finalizing procurement.

Selection Notes

Select this component when a dual N-channel configuration is required in a small surface-mount form factor. Evaluate the 55 mΩ on-resistance against the expected load current to ensure thermal management remains within the 2.5 W power dissipation limit. Confirm that the 60 V voltage rating provides adequate headroom for the target application circuit.

Part Context

This part belongs to the SI7 series of dual MOSFETs from Vishay Siliconix. It shares the PowerPAK-SO-8 package style with other devices in the lineup but differs in voltage and current ratings. The dual configuration allows for space-saving designs in bridge drivers or high-current switching applications where multiple channels are needed.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative dual N-channel MOSFETs by comparing pin assignments, Rds(on), and package dimensions directly with the manufacturer's documentation.