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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 3.8A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：3.8A
- Rds On (Max) @ Id, Vgs：49mOhm @ 5.9A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI7942DP-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in a leadless PowerPAK SO-8 package. It features a drain-source voltage (VDS) of 100 V and a continuous drain current (ID) of 5.9 A at 25 °C. The on-state resistance (RDS(on)) is specified at 0.049 Ω at VGS = 10 V and 0.060 Ω at VGS = 6 V. The device supports a maximum junction temperature of 150 °C and offers a typical junction-to-case thermal resistance (RthJC) of 2.2 °C/W.
Feature Summary
- Dual configuration designed for space savings within the PowerPAK SO-8 footprint
- TrenchFET technology providing low thermal resistance and high performance
- Halogen-free construction compliant with IEC 61249-2-21 standards
Applications
- Synchronous buck converters requiring shoot-through resistance
- Primary side switch applications in power supplies
Procurement Notes
Verify the specific ordering suffix to confirm halogen-free status. The -GE3 suffix indicates compliance with RoHS and halogen-free requirements, whereas the -E3 suffix denotes lead-free composition only. Confirm availability as manufacturing lifecycles may change. Ensure the datasheet revision matches the design requirements before finalizing procurement.
Selection Notes
Select this component when a compact dual N-channel solution is required for 100 V applications. The PowerPAK SO-8 package allows direct substitution for standard SO-8 footprints while offering superior thermal dissipation. Evaluate the RDS(on) specifications against the intended gate drive voltage to ensure optimal conduction losses are met.
Part Context
This part belongs to the Vishay Siliconix Si7942DP series of dual N-channel MOSFETs. It utilizes the PowerPAK SO-8 package, which shares dimensions with the standard SO-8 but provides enhanced thermal characteristics comparable to larger packages like the DPAK. The device integrates two independent channels on a single die.
Replacement Considerations
The SI7942DP-T1-E3 is a verified lead-free alternative that lacks the halogen-free certification found in the -GE3 variant. Verify pinout compatibility and thermal resistance ratings when substituting other dual MOSFETs from different manufacturers.
