SI7945DP-T1-GE3

$2.18

Description：MOSFET 2P-CH 30V 7A PPAK SO8
Series：TrenchFET®

SKU:968fb23904fa Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 30V 7A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：7A
Rds On (Max) @ Id, Vgs：20mOhm @ 10.9A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：74nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：1.4W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：-
Qualification：-

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SI7945DP-T1-GE3

Overview

The SI7945DP-T1-GE3 is a dual P-channel MOSFET array manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in a PowerPAK SO-8 surface-mount package. The device features a drain-source voltage of 30V and a continuous drain current of 7A. Key electrical parameters include a maximum on-resistance of 26 milliohms at 10V gate drive, a gate charge of 18nC, and a threshold voltage of 2V. The component supports a junction temperature range from -55°C to 150°C with a maximum power dissipation of 1.4W.

Feature Summary

Dual P-channel configuration for efficient half-bridge or synchronous rectifier applications
TrenchFET technology ensures low on-resistance and optimized switching performance
PowerPAK SO-8 package provides enhanced thermal conductivity and compact footprint

Applications

DC-DC converter output stages
Synchronous rectification circuits
Motor control driver interfaces
Load switch implementations

Procurement Notes

Verify the obsolete status of this specific part number before integration into new designs. Confirm that the PowerPAK SO-8 pinout matches the target PCB layout requirements. Ensure that the 30V rating aligns with the system's maximum operating voltage under all transient conditions. Check for available alternative components if long-term supply continuity is required.

Selection Notes

Select this component when a dual P-channel solution is required for low-voltage applications up to 30V. The 7A current capability and 26mΩ resistance make it suitable for moderate power levels. Consider the 1.4W power dissipation limit and ensure adequate thermal management on the PCB. The logic-level gate drive characteristics facilitate direct interfacing with standard microcontroller outputs.

Part Context

This device belongs to the TrenchFET series of power MOSFETs from Vishay Siliconix. It is designed for high-efficiency power switching applications where low conduction losses are critical. The dual configuration allows for space-saving designs in bridge topologies compared to discrete single-channel alternatives.