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Product Detailed Parameters
- Description：MOSFET 2N-CH 150V 2.1A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：150V
- Current - Continuous Drain (Id) @ 25°C：2.1A
- Rds On (Max) @ Id, Vgs：150mOhm @ 3.3A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix Si7946DP-T1-E3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in a leadless PowerPAK SO-8 package. It features a drain-source voltage (VDS) of 150 V and a continuous drain current (ID) of 3.3 A at 25 °C. The on-state resistance (RDS(on)) is specified at 0.150 Ω with a gate-source voltage (VGS) of 10 V, and 0.168 Ω at VGS = 6 V. The device supports a maximum power dissipation of 3.5 W at 25 °C and operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Dual MOSFET configuration designed for space savings in compact circuit layouts.
- TrenchFET power MOSFET technology optimized for fast switching performance in PWM applications.
- Avalanche rated capability for handling single avalanche energy events.
Applications
- Primary side switch circuits
- PWM optimized switching applications
Procurement Notes
Verify the specific ordering suffix when sourcing components. The Si7946DP-T1-E3 designation indicates a lead-free product. Ensure that the procurement channel provides documentation confirming compliance with the IEC 61249-2-21 standard if halogen-free status is required for the application.
Selection Notes
Select this component for designs requiring high-voltage isolation with a 150 V rating and low thermal resistance. The dual configuration allows for efficient implementation of bridge or half-bridge topologies. Evaluate the 0.150 Ω RDS(on) specification against the expected load current to ensure adequate thermal management within the PowerPAK SO-8 package constraints.
Part Context
This component belongs to the Vishay Siliconix Si79 series of TrenchFET power MOSFETs. It is specifically engineered to provide enhanced switching speed and reduced thermal resistance compared to traditional packages. The dual configuration integrates two independent N-channel devices into a single surface-mount footprint.
Replacement Considerations
Consult official Vishay documentation for verified substitute part numbers. Cross-referencing requires matching the 150 V rating, dual N-channel topology, and PowerPAK SO-8 package dimensions to ensure functional compatibility.
FAQ
Is the Si7946DP-T1-E3 halogen-free?
The datasheet confirms that the Si7946DP family is available as halogen-free according to IEC 61249-2-21. Verify the specific ordering suffix to confirm halogen-free status.
What is the maximum single avalanche energy rating?
The absolute maximum ratings specify a single avalanche energy (EAS) of 4 mJ when tested with an inductance of 0.1 mH.
How does the gate threshold voltage vary with temperature?
The typical gate threshold voltage (VGS(th)) is 2.4 V at 25 °C. The normalized characteristics indicate that the threshold voltage decreases as the junction temperature increases from -55 °C to 150 °C.
