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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 3A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：3A
- Rds On (Max) @ Id, Vgs：75mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：-
- Qualification：-
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Overview
The SI7948DP-T1-GE3 is a dual N-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in a PowerPAK-SO-8 surface-mount package designed for high-density applications. The device features a drain-source voltage rating of 100V and a continuous drain current of 20A at 25°C. Key electrical parameters include a maximum on-resistance of 65 milliohms at a gate-source voltage of 10V. The component supports a gate-source voltage range of ±20V and operates within a junction temperature range of -55°C to +150°C. It is RoHS compliant and part of the SI7 series.
Feature Summary
- Dual N-channel configuration integrated into a single compact PowerPAK-SO-8 package
- TrenchFET power transistor technology for optimized performance
- Lead-free finish with halogen-free and RoHS compliance
Applications
- DC-DC converter circuits requiring dual channel control
- Power management systems in portable electronics
- Load switching applications in industrial equipment
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging and compliance status. Confirm that the component meets all relevant environmental directives required for the target market. Cross-reference the datasheet revision date to ensure alignment with current manufacturing specifications and pinout definitions before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel solution is required in a small footprint. Ensure the application voltage does not exceed the 100V drain-source rating. Verify that the thermal design can handle the specified power dissipation. Compare the on-resistance and gate charge requirements against alternative devices in the same package family to optimize circuit efficiency.
Part Context
This part belongs to the Vishay Siliconix SI7 series of TrenchFET MOSFETs. It shares the PowerPAK-SO-8 package form factor with other devices in the lineup but differs in voltage and current ratings. The dual configuration allows for space-saving designs compared to using two discrete single-channel transistors.
Replacement Considerations
Check for direct substitutes within the SI79xxDP series from Vishay. Verify pin compatibility and electrical parameter equivalence before replacing with components from other manufacturers.
