SI7956DP-T1-GE3

Overview

The Vishay Siliconix Si7956DP-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in a leadless PowerPAK SO-8 package. It features a drain-source voltage (VDS) of 150 V and a continuous drain current (ID) of 4.1 A at 25 °C. The device exhibits a maximum on-resistance (RDS(on)) of 0.105 Ω at VGS = 10 V and 0.115 Ω at VGS = 6 V. Key dynamic parameters include a total gate charge (Qg) of 26 nC and a forward transconductance (gfs) of 10 S. Operating junction temperatures range from -55 °C to +150 °C, with a maximum power dissipation of 3.5 W at 25 °C.

Feature Summary

• Dual MOSFET configuration designed for space savings within the PowerPAK SO-8 footprint.
• TrenchFET technology provides low on-resistance combined with low thermal resistance.
• Halogen-free construction compliant with IEC 61249-2-21 standards.

Applications

• High efficiency primary side switches
• Half bridge converters
• Forward converters

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number against official Vishay documentation. Confirm that the specific suffix corresponds to the required halogen-free and lead-free specifications. Ensure the ordering quantity aligns with standard reel packaging requirements defined by the manufacturer.

Selection Notes

Select this component when a dual N-channel topology is required for high-voltage switching applications. The 150 V rating supports primary side operations, while the low RDS(on) minimizes conduction losses. Evaluate thermal management strategies based on the specified junction-to-ambient resistance values for the target PCB layout.

Part Context

This component belongs to the Vishay Siliconix TrenchFET family, specifically engineered for surface-mount applications. It utilizes the PowerPAK SO-8 package, which offers a smaller footprint than traditional packages while maintaining thermal performance comparable to larger DPAK devices. The dual configuration allows for integrated circuit designs requiring two independent channels.

Replacement Considerations

Direct replacements must match the 150 V rating, dual channel configuration, and PowerPAK SO-8 footprint. Verify that alternative components meet or exceed the 0.105 Ω RDS(on) specification at VGS = 10 V and maintain compatible gate charge characteristics for similar switching speeds.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage (VGS) rating is ± 20 V.

How does the package affect thermal performance compared to standard SO-8?

The PowerPAK SO-8 package provides significantly lower junction-to-case thermal resistance (typical 2.2 °C/W) compared to standard SO-8 packages, allowing it to handle higher power densities within the same footprint.

Is the device suitable for avalanche energy applications?

Yes, the datasheet specifies a single avalanche energy (EAS) rating of 11 mJ with an inductance of 0.1 mH.