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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 7.2A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：7.2A
- Rds On (Max) @ Id, Vgs：16.5mOhm @ 11.3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：-
- Qualification：-
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Overview
The SI7958DP-T1-E3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It is housed in a PowerPAK SO-8 surface-mount package. The device features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 24 A at 25°C. The maximum on-resistance (Rds(on)) is 5.8 mΩ at Vgs = 10 V. Gate-source voltage (Vgs) is rated at ±20 V, with a threshold voltage (Vgs(th)) maximum of 2.5 V at 250 µA. Total gate charge (Qg) is 65 nC at 10 V. Input capacitance (Ciss) is 2300 pF at 20 V. Power dissipation is 46 W. Operating junction temperature ranges from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration for space-efficient circuit designs
- TrenchFET power transistor technology for low on-resistance
- Surface-mount PowerPAK SO-8 package for automated assembly
Applications
- DC-DC converter output stages
- Load switching applications
- Power management integrated circuits (PMICs)
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm pinout compatibility and electrical specifications. Confirm RoHS compliance status through the latest datasheet revision. Check for obsolescence notices or lifecycle changes directly from Vishay Semiconductors before finalizing procurement plans.
Selection Notes
Select this component for applications requiring dual N-channel isolation in a compact footprint. Ensure the thermal design accommodates the 46 W power dissipation rating. Verify that the gate drive voltage meets the requirements for optimal Rds(on) performance at 10 V.
Part Context
This part belongs to the SI7 series of TrenchFET MOSFETs from Vishay Siliconix. The SI79xxDP variants typically denote dual N-channel devices optimized for high-current, low-voltage switching applications. The PowerPAK SO-8 package provides enhanced thermal performance compared to standard SO-8 packages.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Vishay's official cross-reference tools for verified alternatives.
