SI7960DP-T1-E3

$2.41

Description：MOSFET 2N-CH 60V 6.2A PPAK SO8
Series：TrenchFET®

SKU:f59301a5e08c Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 6.2A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：6.2A
Rds On (Max) @ Id, Vgs：21mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：1.4W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：-
Qualification：-

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SI7960DP-T1-E3

Overview

The Vishay Siliconix SI7960DP-T1-E3 is a dual N-channel MOSFET featuring TrenchFET technology and housed in a lead-free PowerPAK SO-8 package. It provides a drain-source voltage (VDS) of 60 V with a maximum on-state resistance (RDS(on)) of 0.025 Ω at VGS = 4.5 V and 0.021 Ω at VGS = 10 V. The device supports a continuous drain current (ID) of up to 9.7 A at TA = 25 °C, with a gate-source voltage rating of ± 20 V. Operating junction temperatures range from -55 °C to +150 °C, and the component includes an integrated body diode.

Feature Summary

Dual N-channel configuration for space savings
TrenchFET power MOSFET technology
Leadless PowerPAK SO-8 package

Applications

Power management circuits requiring compact dual-switch solutions
Low-voltage DC-to-DC converter designs
Load switching applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance requirements. The E3 suffix indicates lead-free construction, while GE3 denotes both lead-free and halogen-free attributes according to IEC 61249-2-21 standards. Confirm that the selected variant matches the environmental specifications required for the intended manufacturing process.

Selection Notes

Evaluate the thermal resistance ratings, specifically the steady-state junction-to-ambient resistance of 60 °C/W, when designing heat dissipation strategies. Ensure the gate drive voltage meets the minimum threshold for optimal RDS(on) performance. Verify that the pulsed drain current capability of 40 A aligns with the peak load demands of the target application circuit.

Part Context

This component belongs to the Vishay Siliconix Si7960DP series of dual N-channel MOSFETs. It utilizes advanced TrenchFET technology to achieve low on-resistance within a compact surface-mount footprint. The PowerPAK SO-8 package is designed to minimize thermal resistance and reduce board space compared to traditional packages.

Replacement Considerations

SI7960DP-T1-GE3

FAQ

What is the maximum continuous drain current for this device?

The maximum continuous drain current is 9.7 A at an ambient temperature of 25 °C.

Does this component contain halogens?

The SI7960DP-T1-E3 variant is not explicitly stated as halogen-free; however, the SI7960DP-T1-GE3 variant is confirmed to be halogen-free according to IEC 61249-2-21.