SI7962DP-T1-E3

Description：MOSFET 2N-CH 40V 7.1A PPAK SO8
Series：TrenchFET®

SKU:41d7ba6f2f2b Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 7.1A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：7.1A
Rds On (Max) @ Id, Vgs：17mOhm @ 11.1A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：1.4W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：-
Qualification：-

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SI7962DP-T1-E3

Overview

The SI7962DP-T1-E3 is a dual N-channel Power MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in a compact PowerPAK SO-8 surface-mount package. The device features a drain-source voltage rating of 60 V and a continuous drain current of 14 A. Key electrical parameters include a maximum on-resistance of 15 mΩ at 10 V gate drive and a total gate charge of 22 nC. It supports an operating junction temperature range from -55°C to +150°C with a power dissipation capacity of 3.5 W.

Feature Summary

Dual configuration integrates two independent N-channel MOSFETs within a single compact package for space-constrained designs.
TrenchFET technology provides low on-resistance and optimized switching performance characteristics.
PowerPAK SO-8 packaging enables efficient thermal management and high-density surface mount assembly.

Applications

DC-DC converter circuits requiring synchronous rectification
Load switch applications in portable electronic devices
Power management modules for automotive electronics

Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm RoHS compliance status and specific lot traceability data prior to integration. Ensure storage conditions adhere to moisture sensitivity level requirements to maintain solderability and long-term reliability during PCB assembly processes.

Selection Notes

Evaluate the 15 mΩ on-resistance against system efficiency targets at the intended operating current levels. Assess the 22 nC gate charge to determine driver capability requirements for optimal switching speeds. Compare the 3.5 W power dissipation limit with thermal design constraints to ensure adequate heat sinking or board layout provisions are implemented.

Part Context

This component belongs to the Vishay SI79xxDP series of dual MOSFETs designed for high-efficiency power applications. It serves as a complementary counterpart to P-channel variants within the same package family, facilitating half-bridge and full-bridge topologies. The series emphasizes miniaturization without compromising current handling capabilities.