SI7972DP-T1-GE3

$1.02

Description：MOSFET 2N-CH 60V 8A PPAK SO8
Series：TrenchFET®

SKU:b53029704b9d Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 8A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：8A (Tc)
Rds On (Max) @ Id, Vgs：18mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1050pF @ 30V
Power - Max：22W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：-
Qualification：-

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SI7972DP-T1-GE3

Overview

The Si7972DP-T1-GE3 is a dual N-channel 60 V (D-S) MOSFET utilizing TrenchFET technology. It features a maximum on-state resistance of 0.018 Ω at VGS = 10 V and 0.021 Ω at VGS = 4.5 V. The device supports a continuous drain current of 8 A and a pulsed drain current of 40 A. Typical gate charge is 7.1 nC, with a forward transconductance of 38 S. Operating junction temperature ranges from -55 °C to +150 °C. Maximum power dissipation is 22 W at TC = 25 °C. The component is housed in a leadless PowerPAK SO-8 package.

Feature Summary

TrenchFET power MOSFET architecture optimized for PWM applications
Dual N-Channel configuration within a compact PowerPAK SO-8 package
100% Rg and UIS tested for enhanced reliability

Applications

System power DC/DC conversion circuits

Procurement Notes

Verify the specific ordering suffix against official Vishay documentation to confirm package type and compliance status. Ensure that the requested part number matches the exact electrical specifications required for the target application design parameters.

Selection Notes

Select this component for low-voltage, high-current dual-channel switching requirements where minimal on-resistance is critical. Evaluate thermal management needs based on the specified junction-to-case resistance ratings under steady-state conditions.

Part Context

This component belongs to the Vishay Siliconix Si79xxDP series of dual N-channel MOSFETs. These devices are designed for surface-mount applications requiring efficient power switching in compact form factors suitable for modern electronic systems.

Replacement Considerations

Consult official Vishay cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence with other dual-channel MOSFETs without verifying pinout compatibility and absolute maximum ratings.