SI8902AEDB-T2-E1

Overview

The SI8902AEDB-T2-E1 is a Vishay Siliconix N-Channel 24 V (D-S) MOSFET in a MICRO FOOT® package. It features a common drain configuration with a maximum source-to-source voltage of 24 V and a continuous current of 11 A at 25 °C case temperature. The on-state resistance ranges from 0.028 Ω to 0.037 Ω depending on the gate-source voltage. Operating junction temperatures span from -55 °C to +150 °C, with a typical ESD protection rating of 5000 V (HBM).

Feature Summary

• Utilizes TrenchFET® power MOSFET technology for optimized performance.
• Features a compact 2.4 mm x 1.6 mm outline with a thin 0.6 mm maximum height profile.
• Provides high electrostatic discharge protection rated at 5000 V (HBM).

Applications

• Battery protection switch
• Bi-directional switch

Procurement Notes

Verify the component against official Vishay documentation to confirm compliance with RoHS standards and halogen-free material categorization. Ensure that the ordering suffix matches the lead-free specification required for the assembly process. Cross-reference the marking code '8902AE' on the die backside to authenticate the part before integration into production lines.

Selection Notes

Select this component when space constraints require a footprint significantly smaller than standard packages like TSSOP-8. Evaluate the thermal management requirements based on the specified junction-to-ambient resistance. Confirm that the application's gate drive voltage aligns with the threshold characteristics to ensure optimal on-state resistance performance.

Part Context

This device belongs to the Vishay Siliconix MICRO FOOT family, which employs wafer-level chip-scale packaging technology. This approach eliminates the need for an outer package, reducing parasitic effects and improving thermal performance compared to traditional leaded products.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided datasheet or supporting documentation.