ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 6.2A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：6.2A
- Rds On (Max) @ Id, Vgs：20mOhm @ 8.2A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.14W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
Download product information
Overview
The SI9926BDY-T1-E3 is a dual N-channel enhancement mode MOSFET manufactured by Vishay Semiconductors using TrenchFET technology. It features an SOIC-8 surface-mount package with two independent channels. Key electrical parameters include a drain-source breakdown voltage (Vds) of 20 V and a continuous drain current (Id) of 6.2 A. The device exhibits a maximum on-resistance (Rds(on)) of 18 mΩ at specified gate-source voltages. The gate-source voltage range is ±12 V, with a threshold voltage (Vgs(th)) of 600 mV. Total gate charge (Qg) is 22 nC. Power dissipation is rated at 3.1 W, operating within a temperature range of -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in a compact SOIC-8 package
- TrenchFET power FET technology for low on-resistance
- Enhancement mode operation with defined threshold characteristics
Applications
- Low-side switching applications requiring dual channel control
- Power management circuits utilizing 20V logic levels
- General purpose transistor arrays in SMD designs
Procurement Notes
Verify component status as the SI9926BDY-T1-E3 is listed as obsolete or end-of-life by the manufacturer. Confirm availability through authorized distributors or secondary markets if sourcing is required. Ensure that any replacement components maintain equivalent electrical specifications and pin compatibility for the target application design.
Selection Notes
Select this component when a dual N-channel MOSFET with 20V rating and 6.2A current capacity is needed in an SOIC-8 footprint. Compare against the SI9926CDY-T1-E3 variant which offers higher current ratings. Verify thermal requirements align with the 3.1W power dissipation limit and ensure PCB layout supports the SOIC-8 package dimensions for proper heat sinking.
Part Context
This part belongs to the Vishay SI9 series of TrenchFET MOSFETs. It shares the same base die and electrical characteristics as the SI9926CDY-T1-E3 but may differ in specific manufacturing lot qualifications or packaging suffixes. The 'E3' suffix indicates lead-free compliance. It is distinct from single-channel variants like the SI4431CDY-T1-E3.
Replacement Considerations
The SI9926CDY-T1-E3 is documented as a recommended alternative with similar 20V/8A specifications. Verify pinout compatibility between the BDY and CDY suffixes before substitution. No other direct public substitutes are confirmed in the provided data.
