ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：18mOhm @ 8.3A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1200pF @ 10V
- Power - Max：3.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
Download product information
Overview
The Vishay Siliconix SI9926CDY-T1-GE3 is a dual N-channel MOSFET featuring TrenchFET technology, housed in an SO-8 package. It supports a drain-source voltage of 20 V and delivers a continuous drain current of 8 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 0.018 Ω at VGS = 4.5 V and 0.022 Ω at VGS = 2.5 V. Typical total gate charge is 10 nC at VGS = 4.5 V. It includes 100% UIS testing for reliability.
Feature Summary
- Dual N-channel configuration with TrenchFET power MOSFET structure
- 100% Unclamped Inductive Switching (UIS) tested for ruggedness
- Lead-free and halogen-free compliant material categorization
Applications
- DC/DC converter circuits
- Game machine power management
- PC system power regulation
Procurement Notes
Verify the specific ordering suffix to confirm compliance requirements. The -GE3 suffix indicates lead-free and halogen-free status, while -E3 denotes lead-free only. Confirm package type and tape/reel specifications match design needs. Ensure sourcing from authorized distributors to guarantee authenticity and traceability of the Vishay Siliconix component.
Selection Notes
Select this component for low-voltage, high-current applications requiring dual channel isolation. Evaluate thermal resistance ratings against system dissipation limits. Verify gate drive voltage compatibility with specified RDS(on) thresholds. Consider the SO-8 package constraints for PCB layout and heat sinking requirements in dense designs.
Part Context
This part belongs to the Vishay Siliconix Si9926 series of dual N-channel MOSFETs. It utilizes TrenchFET technology to achieve low on-resistance and fast switching speeds. The SO-8 package provides a compact footprint suitable for surface mount applications in consumer electronics and computing hardware.
Replacement Considerations
Check datasheets for alternative dual N-channel MOSFETs with matching 20 V VDS and comparable RDS(on). Verify pinout compatibility with the SO-8 package. Ensure thermal characteristics and gate charge values align with existing circuit designs to maintain performance stability.
