SI9933BDY-T1-E3

$1.09

Description：MOSFET 2P-CH 20V 3.6A 8SOIC
Series：-

SKU:2274ff2d297d Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 3.6A 8SOIC
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：3.6A
Rds On (Max) @ Id, Vgs：60mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id：1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：1.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SI9933BDY-T1-E3

Overview

The SI9933BDY-T1-E3 is a dual P-Channel MOSFET manufactured by Vishay / Siliconix. It utilizes TrenchFET technology and is housed in an SOIC-8 surface-mount package. The device supports a drain-source voltage of -20 V and a gate-source voltage range of ±12 V. Key electrical characteristics include a continuous drain current of 4 A, a maximum on-resistance of 58 mΩ, and a gate charge of 26 nC. It operates within a temperature range of -50 °C to +150 °C with a power dissipation rating of 3.1 W.

Feature Summary

Dual-channel configuration for integrated circuit solutions
TrenchFET technology for optimized performance
Enhancement mode operation

Applications

Power management circuits
Load switching applications
DC/DC converter topologies

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official documentation. Ensure the specific suffix matches project requirements. Validate datasheet revisions against manufacturing dates. Cross-reference part numbers with manufacturer catalogs to avoid obsolete variants.

Selection Notes

Evaluate thermal management requirements based on the 3.1 W power dissipation limit. Compare on-resistance values against system efficiency targets. Verify gate drive compatibility with the specified ±12 V limits. Assess package suitability for PCB layout constraints. Consider operating temperature ranges for environmental reliability.

Part Context

This component belongs to the SI9 series of P-Channel MOSFETs from Vishay / Siliconix. It shares the SOIC-8 packaging format with other devices in the family but differs in channel count and electrical ratings. The TrenchFET technology distinguishes it from standard planar MOSFETs.