SIA432DJ-T1-GE3

$1.10

Description：MOSFET N-CH 30V 12A PPAK SC70-6
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:faeb3a590195 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIA432DJ-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 12A PPAK SC70-6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIA432DJ-T1-GE3

Description：MOSFET N-CH 30V 12A PPAK SC70-6
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：20mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：800 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.5W (Ta), 19.2W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SC-70-6
Package / Case：PowerPAK® SC-70-6

Single FETs, MOSFETs datasheet and documents for SIA432DJ-T1-GE3

SIA432DJ-T1-GE3

Single FETs, MOSFETs Overview

The SiA432DJ is a Vishay Siliconix N-Channel 30 V (D-S) MOSFET utilizing TrenchFET technology. It features a thermally enhanced PowerPAK SC-70 package with a small footprint area. The device is rated for a drain-source voltage of 30 V and offers an on-state resistance of 0.0200 Ω at VGS = 10 V, or 0.0240 Ω at VGS = 4.5 V. Continuous drain current reaches 10.1 A at TA = 25 °C. Total gate charge is typically 5.6 nC at VGS = 10 V. Operating junction temperature ranges from -55 to 150 °C.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET technology
Thermally enhanced PowerPAK SC-70 package
Small footprint area
100% UIS tested

Single FETs, MOSFETs Applications

Load Switch

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free and halogen-free status. Confirm that the component matches the exact Vishay part number and package type required for your design. Ensure compliance with RoHS directives as specified in the manufacturer's datasheet before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low on-resistance and high thermal efficiency within a compact surface-mount form factor. Consider the 30 V drain-source voltage rating and the specific gate threshold characteristics when designing drive circuits. Evaluate the thermal resistance ratings to ensure adequate heat dissipation under expected load conditions.

Single FETs, MOSFETs Part Context

This component belongs to the Vishay Siliconix SiA series of N-Channel MOSFETs. It utilizes TrenchFET technology to achieve low on-resistance and fast switching speeds. The PowerPAK SC-70 package provides a thermally optimized solution for space-constrained designs while maintaining robust electrical performance.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical specifications before considering alternatives.