SIA511DJ-T1-GE3

SIA511DJ-T1-GE3

$0.76
  • Description:MOSFET N/P-CH 12V 4.5A PPAK8X8
  • Series:TrenchFET®

SKU:5428c0da786c Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 12V 4.5A PPAK8X8
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):12V
  • Current - Continuous Drain (Id) @ 25°C:4.5A
  • Rds On (Max) @ Id, Vgs:40mOhm @ 4.2A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:12nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds:400pF @ 6V
  • Power - Max:6.5W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:PowerPAK® SC-70-6 Dual
  • Supplier Device Package:PowerPAK® SC-70-6 Dual
  • Grade:-
  • Qualification:-

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SIA511DJ-T1-GE3

Overview

The SIA511DJ-T1-GE3 is a dual N-channel and P-channel MOSFET array manufactured by Vishay Siliconix. It utilizes TrenchFET technology to achieve low on-resistance within a compact PowerPAK SC-70-6 Dual surface-mount package. The device supports a drain-source voltage of 40V and operates across an extended junction temperature range from -55°C to +150°C. Designed for high-efficiency switching, it features a logic-level gate threshold suitable for direct interface with standard digital logic circuits.

Feature Summary

  • Dual configuration integrating both N-channel and P-channel transistors in a single package
  • TrenchFET technology implementation for optimized power performance
  • Logic-level gate threshold capability for direct digital control
  • Extended thermal operating range supporting high-temperature environments

Applications

  • Low-power switching circuits
  • Logic-level gate drive applications
  • Power management modules

Procurement Notes

Verify the specific datasheet version when sourcing this component, as Vishay may release updates that alter electrical characteristics or pin configurations. Confirm compliance with RoHS directives and REACH SVHC requirements prior to integration. Ensure the ordering suffix matches the required tape and reel packaging specifications for automated assembly processes.

Selection Notes

Select this component when space-constrained designs require complementary N/P-channel pairs. The SC-70-6 Dual package offers a small footprint compared to discrete solutions. Evaluate the combined on-resistance values against thermal dissipation limits in the target application to ensure reliable operation under continuous load conditions.

Part Context

This part belongs to the SIA series of MOSFETs from Vishay Siliconix. The series focuses on providing efficient switching solutions in compact packages. The SIA511DJ variant specifically addresses the need for dual-channel functionality in limited board areas, distinguishing it from single-channel counterparts in the broader product line.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

SIA511DJ-T1-GE3SIA511DJ-T1-GE3
$0.76
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