SIA778DJ-T1-GE3

$0.30

Description：MOSFET 2N-CH 12V/20V 4.5A PPAK
Series：TrenchFET®

SKU:2cc3db3f3907 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 12V/20V 4.5A PPAK
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：12V, 20V
Current - Continuous Drain (Id) @ 25°C：4.5A, 1.5A
Rds On (Max) @ Id, Vgs：29mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds：500pF @ 6V
Power - Max：6.5W, 5W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SC-70-6 Dual
Supplier Device Package：PowerPAK® SC-70-6 Dual
Grade：-
Qualification：-

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SIA778DJ-T1-GE3

Overview

The SiA778DJ-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology in a thermally enhanced PowerPAK SC-70 package. Channel 1 features a 12 V drain-source voltage (VDS) with an on-resistance (RDS(on)) of 0.029 Ω at VGS = 4.5 V and a continuous drain current (ID) of 4.5 A. Channel 2 provides a 20 V VDS with an RDS(on) of 0.225 Ω at VGS = -4.5 V and an ID of 1.5 A. The device operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

Dual N-channel configuration integrating two distinct MOSFETs within a single leadless PowerPAK SC-70 package for space-constrained designs.
TrenchFET power technology engineered to deliver low on-resistance and optimized switching performance.
Thermally enhanced package design providing small footprint area and efficient heat dissipation capabilities.

Applications

N-channel level shift load switch applications
Power switching for portable devices
Management of 0 V to 8 V power lines

Procurement Notes

Verify the specific ordering suffix '-T1-GE3' to confirm reel packaging and halogen-free compliance. Ensure the component meets RoHS Directive 2002/95/EC requirements for your assembly process. Confirm that the lead-free status aligns with your soldering profile specifications.

Selection Notes

Select this component when a compact dual-switch solution is required for low-voltage portable electronics. Evaluate the thermal resistance ratings against your board layout constraints. Consider the distinct voltage ratings of each channel to ensure compatibility with your specific circuit topology.

Part Context

This part belongs to the SiA series of N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK SC-70 package family, designed for surface-mount applications requiring high density. The product represents an evolution in TrenchFET technology aimed at reducing size while maintaining electrical performance.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Verify pinout compatibility and electrical parameters if considering alternative manufacturers.