SIA850DJ-T1-GE3

Description：MOSFET N-CH 190V 950MA PPAK
Series：LITTLE FOOT®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:d114864c665f Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIA850DJ-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 190V 950MA PPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIA850DJ-T1-GE3

Description：MOSFET N-CH 190V 950MA PPAK
Series：LITTLE FOOT®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：190 V
Current - Continuous Drain (Id) @ 25°C：950mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：3.8Ohm @ 360mA, 4.5V
Vgs(th) (Max) @ Id：1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.5 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：90 pF @ 100 V
FET Feature：Schottky Diode (Isolated)
Power Dissipation (Max)：1.9W (Ta), 7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SC-70-6 Dual
Package / Case：PowerPAK® SC-70-6 Dual

Single FETs, MOSFETs datasheet and documents for SIA850DJ-T1-GE3

SIA850DJ-T1-GE3

Single FETs, MOSFETs Overview

The SiA850DJ-T1-GE3 is a Vishay Siliconix N-channel MOSFET with an integrated 190-V Schottky diode, utilizing LITTLE FOOT Plus technology. It features a thermally enhanced PowerPAK SC-70 package with a 0.75 mm profile. The device offers a drain-source breakdown voltage of 190 V and a typical total gate charge of 1.4 nC at VGS = 10 V. Maximum on-state resistance is 3.8 Ω at VGS = 4.5 V and 17.0 Ω at VGS = 1.8 V. Continuous drain current reaches 0.95 A at TC = 25 °C.

Single FETs, MOSFETs Feature Summary

Integrates an N-channel MOSFET with a high-voltage 190-V Schottky diode in a single component.
Utilizes LITTLE FOOT Plus technology for low on-resistance and small footprint area.
Features a thermally enhanced PowerPAK SC-70 package with a thin 0.75 mm profile.

Single FETs, MOSFETs Applications

DC/DC converters for portable devices
Load switches for portable devices

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix T1-GE3 to confirm lead-free and halogen-free compliance according to IEC 61249-2-21 standards. Ensure the component matches the exact marking code X C D X for lot traceability. Confirm that the application environment remains within the specified operating junction temperature range of -55 °C to 150 °C during implementation.

Single FETs, MOSFETs Selection Notes

Select this component when space constraints require a thin 0.75 mm profile combined with high-voltage isolation up to 190 V. The integrated Schottky diode eliminates the need for external components, simplifying circuit design. Evaluate thermal management requirements against the maximum junction-to-ambient resistance of 65 °C/W for surface-mounted applications on FR4 boards.

Single FETs, MOSFETs Part Context

This part belongs to the SiA series of power MOSFETs from Vishay Siliconix. It represents a specialized integration of switching and rectification capabilities within a compact PowerPAK SC-70-6 Dual package. The device is designed to optimize board space while maintaining robust electrical performance for portable electronics.