SIA906EDJ-T1-GE3

Overview

The SiA906EDJ-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a PowerPAK SC-70-6L package with a drain-source voltage (VDS) of 20 V and a continuous drain current (ID) of 4.5 A. The maximum on-resistance (RDS(on)) is 0.046 Ω at VGS = 4.5 V and 0.063 Ω at VGS = 2.5 V. Typical gate charge (Qg) is 3.5 nC. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

• TrenchFET power MOSFET technology for low on-resistance
• Thermally enhanced PowerPAK SC-70 package with small footprint
• Typical ESD protection rating of 560 V

Applications

• Load switch for portable applications
• High frequency DC/DC converter

Procurement Notes

Verify the component against the official datasheet document number 69067. Confirm that the marking code matches 'CC' as specified in the manufacturer's documentation. Ensure the ordering suffix corresponds to lead-free and halogen-free specifications. Validate all electrical parameters directly from the source material before integration.

Selection Notes

Select this component for designs requiring a compact dual N-channel configuration with a 20 V breakdown voltage. The low thermal resistance and small PowerPAK SC-70 footprint make it suitable for space-constrained portable electronics. Verify that the required gate drive voltage aligns with the specified RDS(on) thresholds for optimal efficiency.

Part Context

This part belongs to the SiA906ED series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It is designed specifically for high-frequency switching applications where minimal footprint and efficient thermal management are critical requirements for modern electronic devices.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.