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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 4.5A PPAK8X8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Tc)
- Rds On (Max) @ Id, Vgs：57mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：7.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SC-70-6 Dual
- Supplier Device Package：PowerPAK® SC-70-6 Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SiA907EDJT-T1-GE3 is a dual P-channel MOSFET utilizing TrenchFET technology. It features a Thin PowerPAK SC-70 package with a maximum drain-source voltage of -20 V and a continuous drain current of -4.5 A at 25 °C. The device exhibits an on-resistance of 0.057 Ω at VGS = -4.5 V and 0.095 Ω at VGS = -2.5 V. Total gate charge is typically 23 nC at VGS = -10 V. Operating junction temperature ranges from -55 °C to +150 °C, with a maximum power dissipation of 7.8 W at TC = 25 °C.
Feature Summary
- Dual P-channel configuration in a thermally enhanced Thin PowerPAK SC-70 package
- TrenchFET technology for low on-resistance and high-speed switching
- Typical ESD protection rating of 1500 V HBM
Applications
- Charger switch applications for portable devices
- Load switch implementations in portable electronics
- Battery management systems
Procurement Notes
Verify the component marking code DM against the datasheet to confirm authenticity. Ensure the ordering suffix matches the required tape-and-reel packaging variant. Confirm RoHS compliance status through official Vishay documentation before finalizing procurement specifications.
Selection Notes
Select this component when a compact dual P-channel solution is required for low-voltage portable applications. Evaluate thermal resistance ratings against the specific PCB copper area available for heat dissipation. Verify that the gate drive voltage meets the threshold requirements for the desired on-state resistance performance.
Part Context
This part belongs to the SiA series of TrenchFET power MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK SC-70 form factor designed for surface-mount assembly. The product line emphasizes miniaturization while maintaining robust electrical characteristics for consumer electronics.
Replacement Considerations
Consult the manufacturer's recommended alternatives list for direct replacements. Verify pinout compatibility and thermal characteristics when substituting similar dual P-channel MOSFETs in existing designs.
