SIA910EDJ-T1-GE3

Overview

The SiA910EDJ-T1-GE3 is a dual N-channel enhancement mode MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a thermally enhanced PowerPAK SC-70-6 surface-mount package with a maximum drain-source voltage of 12 V and a continuous drain current of 4.5 A. The device exhibits low on-state resistance, specified as 0.028 Ω at VGS = 4.5 V and ID = 5.2 A, or 0.033 Ω at VGS = 2.5 V. Typical gate charge is 6.2 nC at VGS = 4.5 V. Operating junction temperature ranges from -55 °C to +150 °C, with a typical junction-to-ambient thermal resistance of 52 °C/W.

Feature Summary

• Dual N-channel configuration in a compact leadless PowerPAK SC-70-6 package for small footprint applications
• TrenchFET power MOSFET technology providing low on-resistance and high efficiency
• Typical ESD protection rating of 2400 V for robustness in portable electronics

Applications

• Load switching for portable applications
• High frequency DC/DC converters
• General DC/DC converter circuits

Procurement Notes

Verify the component against official Vishay datasheet document number 65535 to confirm technical specifications and compliance. Ensure the ordering suffix matches the required lead-free and halogen-free status. Cross-reference pinout configurations and recommended pad layouts during procurement to guarantee compatibility with existing PCB designs and manufacturing processes.

Selection Notes

Select this component for applications requiring a dual N-channel MOSFET with a 12 V breakdown voltage and low on-resistance. Evaluate the thermal performance based on the specific ambient conditions and available board space, considering the junction-to-ambient thermal resistance. Confirm that the gate drive voltage aligns with the specified thresholds for optimal RDS(on) performance.

Part Context

This part belongs to the SiA series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes TrenchFET technology to achieve low on-resistance within a thermally enhanced PowerPAK SC-70-6 package. The series is designed for surface mount applications where small footprint area and efficient heat dissipation are critical requirements.

Replacement Considerations

Consult official Vishay documentation for verified replacement options. No specific substitute part numbers are confirmed in the provided source material.

FAQ

What is the maximum continuous drain current for the SiA910EDJ-T1-GE3?

The maximum continuous drain current is 4.5 A, limited by the package thermal characteristics.

Does the SiA910EDJ-T1-GE3 include internal body diodes?

Yes, the device includes continuous source-drain body diodes with a forward voltage of 1.2 V max at IS = 5.4 A.

What is the typical ESD protection rating for this component?

The typical ESD protection rating is 2400 V.