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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 4.5A PPAK8X8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.5A
- Rds On (Max) @ Id, Vgs：94mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.8nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：355pF @ 10V
- Power - Max：6.5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SC-70-6 Dual
- Supplier Device Package：PowerPAK® SC-70-6 Dual
- Grade：-
- Qualification：-
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Overview
The SIA911DJ-T1-GE3 is a P-channel power MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in a PowerPAK SC-70 (SC-70-6) surface-mount package. The device features a drain-source voltage rating of -20 V and a continuous drain current of 4.5 A. Key electrical parameters include a maximum on-resistance of 38 milliohms at a gate-source voltage of -10 V, with a gate threshold voltage typically around 1.2 V. The component supports an operating temperature range from -55°C to +150°C junction temperature and has a maximum power dissipation of 1.5 W.
Feature Summary
- TrenchFET P-channel technology for low on-resistance
- PowerPAK SC-70 surface-mount packaging
- Enhancement mode operation
Applications
- Low-side switching applications
- Load switches
- Power management circuits
Procurement Notes
Verify the specific datasheet revision and ordering suffixes when sourcing this component. Confirm that the SC-70-6 package dimensions match your PCB footprint requirements. Check for RoHS compliance documentation if required by your manufacturing standards. Ensure the supplier provides traceability information for quality assurance purposes.
Selection Notes
Select this part for applications requiring a compact P-channel switch with moderate current handling capabilities. Compare the 38 milliohm on-resistance against thermal constraints in your design. Consider the 4.5 A current rating relative to peak load demands. Evaluate the SC-70-6 package size against available board space.
Part Context
This component belongs to the SIA series of Vishay Siliconix MOSFETs. It is designed for general-purpose power switching in portable and industrial electronics. The SC-70-6 package offers a small form factor suitable for space-constrained designs. It complements other N-channel devices in the same family for complementary bridge configurations.
Replacement Considerations
- SIA911EDJ-T1-GE3
- SIA459EDJ-T1-GE3
FAQ
What is the maximum gate-source voltage for the SIA911DJ-T1-GE3?
The absolute maximum gate-source voltage is typically ±12 V.
Does the SIA911DJ-T1-GE3 have an internal body diode?
Yes, as a standard MOSFET structure, it includes an intrinsic body diode between the source and drain terminals.
What is the typical gate threshold voltage?
The gate threshold voltage is typically 1.2 V, with a maximum specified value often around 1.5 V depending on the specific test conditions in the datasheet.
