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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 4.5A PPAK8X8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.5A
- Rds On (Max) @ Id, Vgs：110mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：250pF @ 10V
- Power - Max：6.5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SC-70-6 Dual
- Supplier Device Package：PowerPAK® SC-70-6 Dual
- Grade：-
- Qualification：-
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Overview
The SIA917DJ-T1-GE3 is a single N-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in a compact SC-70-6 surface-mount package designed for space-constrained applications. The device features a drain-source voltage rating of 20 V and a continuous drain current capacity of 58 A. Key electrical parameters include a maximum on-resistance of 4.5 mΩ at a gate-source voltage of 10 V, with a gate charge of 7 nC. It operates within a temperature range from -55°C to +150°C junction temperature.
Feature Summary
- TrenchFET power technology provides low on-resistance and fast switching characteristics.
- SC-70-6 package offers minimal footprint for high-density PCB layouts.
- Enhancement mode operation ensures reliable turn-on with standard logic-level drive voltages.
Applications
- DC-DC converter output stages
- Load switch circuits
- Power management modules
Procurement Notes
Verify the specific ordering suffix and manufacturer documentation to confirm exact electrical tolerances and pinout configurations before integration. Ensure that the component source is authorized to guarantee authenticity and traceability. Cross-reference the latest datasheet revision for any updates regarding thermal resistance or absolute maximum ratings.
Selection Notes
Select this component when a low-profile N-channel solution is required for 20 V systems. Evaluate the trade-off between the 4.5 mΩ on-resistance and the 58 A current capability against thermal dissipation requirements. Confirm that the SC-70-6 package size aligns with the available board space constraints.
Part Context
This part belongs to the SIA series of N-channel MOSFETs from Vishay Siliconix. The series is characterized by the use of advanced TrenchFET technology to achieve high performance in small packages. The SIA917DJ variant specifically targets applications needing robust current handling in a miniature form factor.
Replacement Considerations
Consult official replacement guides for verified equivalents. Do not assume functional compatibility with other SC-70-6 MOSFETs without verifying pinout alignment and electrical parameter margins.
