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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 4.4A PPAK8X8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.4A (Ta), 4.5A (Tc)
- Rds On (Max) @ Id, Vgs：64mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.9W (Ta), 7.8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SC-70-6 Dual
- Supplier Device Package：PowerPAK® SC-70-6 Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SIA922EDJ-T4-GE3 is a dual N-channel 30 V (D-S) MOSFET utilizing TrenchFET technology. It is housed in a thermally enhanced PowerPAK SC-70 package with a small footprint area and low on-resistance. The device features typical ESD protection of 1500 V (HBM) and 100% Rg testing. Key electrical parameters include a drain-source breakdown voltage of 30 V, a continuous drain current of 4.5 A at TC = 25 °C, and a maximum power dissipation of 7.8 W at TC = 25 °C. The on-state resistance is specified as 0.064 Ω max at VGS = 4.5 V and ID = 3 A. Total gate charge is typically 7.5 nC at VDS = 15 V, VGS = 10 V, and ID = 4 A.
Feature Summary
- Dual N-channel configuration within a compact PowerPAK SC-70 package
- TrenchFET technology for low on-resistance and fast switching
- High electrostatic discharge protection capability
Applications
- Load switch applications in portable devices
- DC/DC converter circuits
- Power management systems in mobile computing
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm tape and reel specifications. Confirm RoHS compliance status through manufacturer datasheets or certificates of conformity. Ensure component authenticity by sourcing from authorized distributors and validating part markings against the provided marking code reference.
Selection Notes
Evaluate thermal performance based on junction-to-ambient resistance when operating without additional heatsinking. Consider the gate threshold voltage range for compatibility with logic-level drivers. Assess package limitations regarding continuous drain current derating at elevated case temperatures compared to pulsed ratings.
Part Context
This component belongs to the SiA922EDJ series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes TrenchFET technology to achieve low on-resistance within a thermally enhanced PowerPAK SC-70 package. The series is designed for portable devices requiring efficient power management and load switching capabilities.
Replacement Considerations
Consult official Vishay documentation for confirmed substitute part numbers. Verify pinout compatibility, voltage ratings, and thermal characteristics before implementation.
