SIA928DJ-T1-GE3

$0.46

Description：MOSFET 2N-CH 30V 4.5A PPAK8X8
Series：TrenchFET®

SKU:4f308648a2f0 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 4.5A PPAK8X8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：4.5A (Tc)
Rds On (Max) @ Id, Vgs：25mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：490pF @ 15V
Power - Max：7.8W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SC-70-6 Dual
Supplier Device Package：PowerPAK® SC-70-6 Dual
Grade：-
Qualification：-

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SIA928DJ-T1-GE3

Overview

The SiA928DJ-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology. It features a thermally enhanced PowerPAK SC-70 package with dimensions of 2.05 mm by 2.05 mm. The device supports a drain-source voltage (VDS) of 30 V and a gate-source voltage (VGS) range of -16 V to +20 V. At VGS = 10 V, the maximum on-resistance (RDS(on)) is 0.025 Ω, while at VGS = 4.5 V, it is 0.033 Ω. The continuous drain current (ID) is rated at 4.5 A under case temperature conditions. Total gate charge (Qg) is typically 6.6 nC at VGS = 10 V.

Feature Summary

Dual N-channel configuration within a compact PowerPAK SC-70 footprint
TrenchFET Gen IV technology for low on-resistance performance
Thermally enhanced leadless package design

Applications

Load switch applications in portable devices
DC/DC converter circuits
Power management systems for mobile computing

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revision status against the latest official documentation. Ensure ordering suffixes match specific packaging requirements such as reel quantities. Validate RoHS compliance documentation prior to procurement integration.

Selection Notes

Evaluate thermal resistance ratings relative to the intended PCB layout and ambient operating conditions. Compare gate charge specifications against driver capabilities to ensure adequate switching speeds. Verify that the selected package dimensions align with the target board space constraints and soldering profile limitations.

Part Context

This component belongs to the SiA series of power MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK SC-70 package family designed for high-density surface mount applications. The device integrates two independent N-channel MOSFETs into a single leadless package structure.