SIB414DK-T1-GE3

Description：MOSFET N-CH 8V 9A PPAK SC75-6
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:1d982d81b008 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIB414DK-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 8V 9A PPAK SC75-6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIB414DK-T1-GE3

Description：MOSFET N-CH 8V 9A PPAK SC75-6
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：8 V
Current - Continuous Drain (Id) @ 25°C：9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4.5V
Rds On (Max) @ Id, Vgs：26mOhm @ 7.9A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.03 nC @ 5 V
Vgs (Max)：±5V
Input Capacitance (Ciss) (Max) @ Vds：732 pF @ 4 V
FET Feature：-
Power Dissipation (Max)：2.4W (Ta), 13W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SC-75-6
Package / Case：PowerPAK® SC-75-6

Single FETs, MOSFETs datasheet and documents for SIB414DK-T1-GE3

SIB414DK-T1-GE3

Single FETs, MOSFETs Overview

The SIB414DK-T1-GE3 is a single N-channel Power MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in a PowerPAK SC-75-6 surface-mount package. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 8 A at case temperature. Its maximum on-resistance is specified at 29 milliohms, with a gate-source voltage rating of ±12 V. The component operates within a junction temperature range of -55°C to +150°C and offers a power dissipation capacity of 3.1 W.

Single FETs, MOSFETs Feature Summary

Single-channel N-configuration utilizing TrenchFET technology for low on-resistance performance
Surface-mount construction in a compact PowerPAK SC-75-6 package
Enhancement mode operation suitable for general switching applications

Single FETs, MOSFETs Applications

DC-DC converter circuits
Load switching modules
Power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'T1' against official datasheets to confirm tape-and-reel packaging requirements. Confirm RoHS compliance status via the manufacturer's documentation. Check for end-of-life notifications or product change notices prior to final design approval. Ensure thermal management aligns with the stated power dissipation limits.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V N-channel MOSFET with low on-resistance is required in a small footprint. Compare the 29 milliohm on-resistance against circuit loss requirements. Evaluate the PowerPAK SC-75-6 package dimensions against board space constraints. Consider the 8 A current rating relative to peak load demands.

Single FETs, MOSFETs Part Context

This part belongs to the SIB series of Vishay Siliconix MOSFETs. It is designed for high-efficiency power switching in portable and industrial electronics. The PowerPAK SC-75-6 package provides improved thermal performance compared to standard SO-8 packages while maintaining a small outline.