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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 10A DIE
- Series：TrenchStop™
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：10:00 AM
- Current - Collector Pulsed (Icm)：30 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 10A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The SIGC06T60EX1SA2 is a bare die Insulated Gate Bipolar Transistor (IGBT) utilizing TRENCHSTOP™ IGBT3 technology. It features a 600V collector-emitter voltage and a nominal DC collector current of 10A at 25°C. The device has a die size of 2.40mm x 2.38mm with a silicon thickness of 70µm. Key electrical characteristics include a maximum VCEsat of 1.9V at 10A, a breakdown voltage of 600V, and an input capacitance of 551pF. It supports a virtual junction temperature range from -40°C to +175°C and offers a short circuit time of 6µs.
Feature Summary
- Combines TRENCHSTOP™ and Fieldstop technology for optimized performance
- Features low saturation voltage and short tail current for reduced switching losses
- Exhibits a positive temperature coefficient to facilitate easy paralleling
Applications
- Industrial power modules
- Discrete component integration
- Motor drives
- White goods inverters
- Resonant applications
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm exact mechanical and material specifications. Confirm that the intended application environment complies with the specified storage conditions and handling requirements for electrostatic sensitive devices. Ensure assembly processes do not consume the Ni Ag backside metal layer completely to maintain solder reliability.
Selection Notes
Select this component for designs requiring high power density in industrial or consumer applications. Consider the 70µm silicon thickness and 200mm wafer compatibility for manufacturing constraints. Evaluate thermal management strategies carefully, as switching characteristics depend heavily on module design and mounting technology rather than being fixed parameters for the bare die.
Part Context
This part belongs to the SIGC06T60E family of TRENCHSTOP™ IGBT3 chips. It is designed as a building block for power modules and discrete components. The 'EX1SA2' suffix denotes specific packaging or tape-and-reel configuration details provided by Infineon. It shares core electrical properties with other variants in the series but may differ in physical handling or delivery format.
Replacement Considerations
Direct replacements must match the 600V rating, 10A nominal current, and 2.40mm x 2.38mm die dimensions. Verify compatibility with existing module assembly processes, particularly regarding wire bonding pad sizes and die bond materials. Cross-reference with other SIGC06T60E variants if different packaging options are required.
