SIGC07T60NCX1SA4

Description：IGBT NPT 600V 6A DIE
Series：-

SKU:2eb8ce4590a0 Category: Single IGBTs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 6A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：6:00 AM
Current - Collector Pulsed (Icm)：18 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 6A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：21ns/110ns
Test Condition：300V, 6A, 54Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

Download product information

SIGC07T60NCX1SA4

Overview

The SIGC07T60NC is a standalone IGBT chip manufactured by Infineon Technologies using Non-Punch-Through (NPT) technology. Designed for integration into power modules, this component features a 600V collector-emitter voltage rating and a continuous DC collector current of 6A at 25°C. The die measures 2.6 x 2.6 mm with a thickness of 100 µm. It exhibits a positive temperature coefficient for saturation voltage, facilitating easy paralleling in high-current applications.

Feature Summary

Utilizes NPT technology for robust performance
Positive temperature coefficient ensures stable operation
Facilitates easy paralleling for higher current capacity

Applications

Industrial motor drives
Power module assembly
High-frequency switching circuits

Procurement Notes

Verify the specific ordering code Q67050-A4134-A001 against procurement requirements to ensure correct identification. Confirm that the receiving facility has appropriate electrostatic discharge protection protocols, as the device is sensitive to ESD per MIL-STD 883 standards. Ensure storage conditions adhere to the recommended environment of dry nitrogen and controlled ambient temperature to maintain component integrity prior to assembly.

Selection Notes

Select this chip when designing modular IGBT assemblies requiring 600V blocking capability and moderate current handling up to 6A. The NPT technology provides a favorable trade-off between switching speed and short-circuit ruggedness. Consider the 100 µm thickness and sawn-on-foil format for compatibility with standard die-bonding processes using epoxy or soft solder.

Part Context

This component belongs to Infineon's discrete IGBT chip portfolio, specifically engineered for internal use within larger power electronic modules rather than direct PCB mounting. It represents an older generation of NPT technology, distinct from modern trench-gate designs, offering proven reliability for industrial drive applications where thermal stability and paralleling ease are prioritized over ultra-fast switching speeds.

Replacement Considerations

Direct replacement requires matching the 600V rating, 6A current class, and 2.6x2.6mm die size. Verify that alternative chips support NPT technology and compatible metallization systems for wire bonding and die attachment.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150 °C.

Is this component suitable for life-support systems?

No, Infineon Technologies components may only be used in life-support devices with express written approval due to safety risks associated with potential failure.