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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 200A DIE
- Series：TrenchStop™
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：200 A
- Current - Collector Pulsed (Icm)：600 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 200A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
Download product information
Overview
The SIGC100T60R3E is a bare die IGBT utilizing TRENCHSTOP™ IGBT3 technology with a 600 V collector-emitter voltage rating. It features a die size of 9.73 mm x 10.23 mm and supports a pulsed collector current up to 600 A. The device exhibits a typical saturation voltage (VCEsat) of 1.45 V at 200 A and 25°C, with a maximum short-circuit time of 6 µs. Designed for high-power industrial applications, it operates within a junction temperature range of -40°C to +175°C.
Feature Summary
- Utilizes trench and field stop technology for optimized performance
- Features low saturation voltage and short tail current characteristics
- Positive temperature coefficient enables easy paralleling
Applications
- Industrial power modules
- Motor drives
- White goods inverters
- Resonant converter applications
Procurement Notes
Verify the specific ordering suffix against Infineon documentation to confirm material content and packaging specifications. Ensure that storage conditions comply with IEC standards for moisture-sensitive devices. Confirm that the component meets RoHS compliance requirements before integration into the supply chain.
Selection Notes
Select this bare die for custom module assembly where high current density is required. Evaluate thermal management capabilities as switching characteristics depend on the final module design. Consider the 600 V rating and 600 A pulsed current capability when designing the circuit layout and protection mechanisms.
Part Context
This component belongs to Infineon's TRENCHSTOP™ IGBT3 family, which combines trench gate technology with field stop structures. This generation offers improved efficiency compared to previous non-punch-through designs. The bare die format allows manufacturers to integrate the chip directly into their proprietary power modules.
Replacement Considerations
Direct replacements require matching the 600 V rating, die dimensions, and electrical characteristics. Verify compatibility with existing module assembly processes, including wire bonding and soldering parameters. Consult Infineon for updated alternatives if the current part is discontinued.
