SIGC100T65R3EX1SA2

Description：IGBT TRENCH FS 650V 200A DIE
Series：TrenchStop™

SKU:79b9acc9fafb Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 200A DIE
Series：TrenchStop™
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：200 A
Current - Collector Pulsed (Icm)：600 A
Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 200A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC100T65R3EX1SA2

Overview

The SIGC100T65R3E is a bare die IGBT chip utilizing TRENCHSTOP™ IGBT3 technology with a 650 V collector-emitter voltage rating. It features a die size of 9.73 mm x 10.23 mm and supports a DC collector current of 100 A at a maximum junction temperature of 175 °C. The typical saturation voltage (VCEsat) is 1.45 V at 200 A and 25 °C, while the integrated gate resistor is 2 Ω. The device includes an emitter pad, a gate pad, and a test pad, with a silicon thickness of 70 µm.

Feature Summary

Utilizes trench and field stop technology for low saturation voltage and short tail current.
Features a positive temperature coefficient to facilitate easy paralleling in power modules.
Includes an integrated gate resistor for simplified driver interface requirements.

Applications

Power module assembly
Industrial motor drives

Procurement Notes

Verify component authenticity through authorized Infineon channels or certified distributors. Confirm that the specific ordering suffix matches the required package configuration and quality grade. Ensure storage conditions adhere to IEC standards for moisture-sensitive devices prior to soldering.

Selection Notes

Select this bare die for custom power module designs requiring high current density and robust thermal performance. Evaluate the 650 V rating against system bus voltages and ensure the 100 A continuous current capability aligns with load requirements. Consider the 70 µm silicon thickness for thermal management strategies.

Part Context

This component belongs to Infineon's TRENCHSTOP™ IGBT3 family, designed for industrial power control applications. It serves as a semiconductor die intended for integration into larger power modules rather than standalone discrete use. The product line emphasizes efficiency and reliability in high-power conversion systems.

Replacement Considerations

Direct replacement requires matching the 650 V rating, 100 A current capacity, and identical die dimensions. Verify compatibility with existing module substrates and bonding processes. Consult Infineon for updated series if newer generations offer improved switching characteristics.