SIGC10T60EX7SA1

Description：IGBT TRENCH FS 600V 20A DIE
Series：TrenchStop™

SKU:e7ac808dc62d Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 600V 20A DIE
Series：TrenchStop™
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：20 A
Current - Collector Pulsed (Icm)：60 A
Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 20A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC10T60EX7SA1

Overview

The SIGC10T60E is a bare die IGBT utilizing TRENCHSTOP™ IGBT3 technology, designed for industrial power control applications. It features a 600V collector-emitter voltage rating and a nominal current of 20A. The chip measures 3.19mm x 3.21mm with a silicon thickness of 70µm on a 200mm wafer. Key electrical characteristics include a maximum VCEsat of 1.9V at 20A and a short circuit time of 6µs. It supports a virtual junction temperature range from -40°C to +175°C.

Feature Summary

Utilizes trench and field stop technology for low saturation voltage and turn-off losses.
Features a positive temperature coefficient for easy paralleling in module designs.
Short tail current enhances switching performance in resonant applications.

Applications

Industrial drives
White goods inverters
Resonant power converters

Procurement Notes

Verify the specific ordering suffix against the official datasheet to confirm material content and packaging specifications. Ensure that the selected variant matches the required application environment and handling constraints. Confirm compliance with relevant safety standards before integration into final products.

Selection Notes

Select this component for high-density power modules requiring robust thermal cycling capability. Evaluate the assembly process to ensure reliable solder connections without consuming the Ni Ag backside metal layer. Consider the 200mm wafer format for manufacturing scalability and yield optimization.

Part Context

This bare die belongs to Infineon's TRENCHSTOP™ IGBT3 family, which combines optimized trench structures with field stop technology. It serves as a core semiconductor element for discrete components and advanced power modules, offering improved efficiency over conventional NPT devices while maintaining ruggedness.

Replacement Considerations

Direct replacements must match the 600V rating, 20A nominal current, and identical die dimensions (3.19mm x 3.21mm). Verify compatibility with existing module assembly processes, particularly regarding wire bonding and die attachment materials.