SIGC11T60SNCX1SA2

Description：IGBT NPT 600V 10A DIE
Series：-

SKU:0852825a56ab Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 10A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：10:00 AM
Current - Collector Pulsed (Icm)：30 A
Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 10A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：28ns/198ns
Test Condition：400V, 10A, 25Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC11T60SNCX1SA2

Overview

The SIGC11T60SNC is a 600V NPT-technology IGBT chip designed for integration into power modules. It features a 100µm thickness and a die size of 3.25 x 3.25 mm². The device supports a DC collector current of 10A and a pulsed current of 30A, with a maximum operating junction temperature of +150°C. Key electrical parameters include a saturation voltage of 1.7V to 2.4V at 10A, a threshold voltage of 3V to 5V, and switching times optimized for inductive loads.

Feature Summary

Utilizes Non-Punch-Through (NPT) technology for stable operation
Positive temperature coefficient facilitates easy paralleling
Optimized switching characteristics for reduced turn-off time
Compatible with epoxy and soft solder die bonding processes

Applications

Motor drives
Power module assembly

Procurement Notes

Verify the specific ordering code Q67050-A4155-A001 against procurement requirements. Confirm that the component meets AQL 0.65 visual inspection standards. Ensure handling procedures account for Electrostatic Discharge sensitivity per MIL-STD 883. Validate storage conditions, requiring dry nitrogen and temperatures below 23°C for periods under six months.

Selection Notes

Select this chip for applications requiring 600V blocking capability and 10A continuous current. Consider its positive temperature coefficient for parallel configurations. Evaluate thermal management needs as the DC current rating depends on assembly thermal properties. Verify compatibility with standard wire bonding materials like aluminum up to 500µm.

Part Context

This component is an individual IGBT chip manufactured using Infineon's NPT technology. It serves as a core semiconductor element within larger IGBT modules rather than a standalone discrete package. The datasheet references the SGP10N60A device for additional context regarding performance characteristics.