SIGC121T60NR2CX1SA2

Description：IGBT NPT 600V 150A DIE
Series：-

SKU:2ae2d05652a3 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 150A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：150 A
Current - Collector Pulsed (Icm)：450 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 150A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：125ns/225ns
Test Condition：300V, 150A, 1.5Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC121T60NR2CX1SA2

Overview

The SIGC121T60NR2C is a silicon IGBT chip manufactured by Infineon Technologies using Non-Punch-Through (NPT) technology. It features a 600V collector-emitter voltage rating and a 150A DC collector current capability at 25°C. The device utilizes a 100µm thick die with an active area of 102.5mm² within an 11x11mm² raster size. Key electrical parameters include a saturation voltage of 1.7V to 2.5V, a threshold voltage of 4.5V to 6.5V, and an integrated gate resistor of 5Ω to 7Ω. Switching characteristics at 125°C include a turn-on delay of 125ns and a turn-off delay of 225ns.

Feature Summary

Utilizes Non-Punch-Through (NPT) technology for robust performance
Features positive temperature coefficient for simplified parallel operation
Includes an integrated gate resistor to optimize switching behavior

Applications

IGBT module manufacturing
Industrial motor drives

Procurement Notes

Verify the specific ordering code Q67041-A4684-A001 against official Infineon documentation to ensure correct part identification. Confirm that the component meets the required AQL 0.65 visual inspection standards. Ensure storage conditions adhere to the recommendation of dry nitrogen below 23°C for optimal shelf life. Validate compatibility with epoxy or soft solder die bonding processes as specified in the mechanical parameters.

Selection Notes

Select this chip for applications requiring high voltage blocking capabilities up to 600V and significant current handling up to 150A. The NPT technology ensures reliable operation across a wide temperature range from -55°C to +150°C. The integrated gate resistor simplifies circuit design by reducing external component count. Consider the thermal properties of the assembly when determining maximum continuous current ratings.

Part Context

This component is a discrete semiconductor chip designed primarily for integration into larger power modules rather than standalone use. It belongs to Infineon's portfolio of IGBT chips utilizing advanced silicon technologies. The product serves as a fundamental building block for power electronics systems requiring efficient energy conversion and control.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Infineon technical support for potential alternatives based on specific application requirements.

FAQ

What is the function of the integrated gate resistor?

The integrated gate resistor, ranging from 5Ω to 7Ω, helps manage switching speeds and reduces electromagnetic interference without requiring external components.

How does NPT technology benefit this IGBT chip?

Non-Punch-Through technology provides a positive temperature coefficient, which facilitates easy paralleling of multiple chips and enhances short-circuit ruggedness.