SIGC12T60NCX1SA1

Description：IGBT NPT 600V 10A DIE
Series：-

SKU:be69675a59fa Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 10A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：10:00 AM
Current - Collector Pulsed (Icm)：30 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 10A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：21ns/110ns
Test Condition：300V, 10A, 27Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC12T60NCX1SA1

Overview

The Infineon SIGC12T60NC is a silicon IGBT chip utilizing Non-Punch-Through (NPT) technology. It features a collector-emitter voltage rating of 600 V and a DC collector current capability of 10 A at 25 °C. The device has a die size of 3.5 x 3.5 mm² with a thickness of 100 µm. Static characteristics include a maximum saturation voltage of 2.5 V at 10 A and a threshold voltage range of 4.5 V to 6.5 V. Dynamic switching parameters measured at 125 °C, 300 V, and 10 A include a turn-on delay of 21 ns, rise time of 8 ns, turn-off delay of 110 ns, and fall time of 25 ns.

Feature Summary

Utilizes Non-Punch-Through (NPT) technology for robust performance
Exhibits a positive temperature coefficient for safe parallel operation
Features a 100 µm thick chip design suitable for high-power modules

Applications

IGBT module assembly
Motor drives

Procurement Notes

Verify the specific ordering code Q67041-A4688-A001 against procurement requirements. Confirm that the component is handled as an Electrostatic Discharge Sensitive Device per MIL-STD 883 standards. Ensure storage conditions adhere to the recommendation of dry nitrogen below 23°C for periods under six months to maintain integrity.

Selection Notes

Select this chip for applications requiring 600 V blocking capability and 10 A continuous current handling. The NPT architecture supports easy paralleling due to its positive temperature coefficient. Verify thermal management capabilities to ensure junction temperatures remain within the -55 °C to +150 °C operating range during inductive load switching.

Part Context

This component belongs to the family of discrete IGBT chips manufactured by Infineon Technologies. It serves as a fundamental building block for constructing larger power modules. The chip is sawn on foil and designed for die bonding using electrically conductive glue or solder, facilitating integration into various industrial power conversion systems.