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Product Detailed Parameters
- Description：IGBT NPT 600V 10A DIE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：10:00 AM
- Current - Collector Pulsed (Icm)：30 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 10A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：21ns/110ns
- Test Condition：300V, 10A, 27Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The Infineon SIGC12T60NC is a silicon IGBT chip utilizing Non-Punch-Through (NPT) technology, designed for integration into power modules. It features a 600V collector-emitter voltage rating and a die size of 3.5 x 3.5 mm² with a thickness of 100 µm. The device supports a DC collector current of 10A and a pulsed current of 30A at Tj=25°C. Static characteristics include a maximum VCE(sat) of 2.5V at IC=10A and VGE=15V. Dynamic switching parameters measured at Tj=125°C, VCC=300V, and IC=10A show a turn-on delay of 21ns, rise time of 8ns, turn-off delay of 110ns, and fall time of 25ns.
Feature Summary
- Positive temperature coefficient facilitates easy paralleling of multiple chips within module assemblies.
Applications
- IGBT Module construction
Procurement Notes
Verify the specific ordering code Q67041-A4688-A001 against the required revision level. Confirm that the sawn-on-foil format matches your assembly equipment capabilities. Ensure storage conditions remain below 6 months in dry nitrogen at 23°C to maintain material integrity before die bonding.
Selection Notes
Select this component when designing high-voltage modules requiring robust NPT technology for improved short-circuit ruggedness. The 100µm thickness and positive temperature coefficient are critical for thermal management and current sharing in parallel configurations. Verify compatibility with epoxy or soft solder die bonding processes specified in the mechanical data.
Part Context
This part belongs to Infineon's discrete IGBT chip portfolio intended for internal manufacturing use within power electronic modules. Unlike packaged components, it serves as a bare die element requiring external wire bonding and substrate attachment. It complements other HV semiconductor solutions by providing a standardized building block for custom module designs.
Replacement Considerations
No public substitute part numbers are documented for this specific bare die configuration. Replacement requires matching the exact die dimensions, metallization stack, and electrical thresholds of the original NPT design.
FAQ
What is the recommended die bonding method?
The datasheet specifies that the collector metallization is suitable for both epoxy and soft solder die bonding.
How does the NPT technology benefit module design?
The Non-Punch-Through technology provides a positive temperature coefficient, which ensures stable current distribution and allows for easy paralleling of chips.
