SIGC12T60NCX1SA4

Description：IGBT NPT 600V 10A DIE
Series：-

SKU:ace0ca32be82 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 10A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：10:00 AM
Current - Collector Pulsed (Icm)：30 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 10A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：21ns/110ns
Test Condition：300V, 10A, 27Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC12T60NCX1SA4

Overview

The Infineon SIGC12T60NCX1SA4 is a silicon IGBT chip utilizing Non-Punch-Through (NPT) technology. It features a collector-emitter voltage rating of 600 V and a die size of 3.5 x 3.5 mm² with a thickness of 100 µm. The device supports a DC collector current of 10 A and a pulsed collector current of 30 A. Key electrical parameters include a saturation voltage of 2.0 V at 10 A, a threshold voltage of 5.5 V, and switching times of 8 ns rise and 25 ns fall under specified inductive load conditions.

Feature Summary

Utilizes NPT technology for positive temperature coefficient characteristics
Designed for easy paralleling in high-power module configurations
Features robust passivation and metallization suitable for epoxy and soft solder die bonding

Applications

IGBT modules
Motor drives

Procurement Notes

Verify the specific ordering code Q67041-A4688-A001 against the datasheet to ensure correct revision matching. Confirm that the X1SA4 suffix aligns with the required packaging or lot traceability specifications. Ensure storage conditions remain within the recommended dry nitrogen environment below 23°C to maintain component integrity prior to assembly.

Selection Notes

Select this component for applications requiring 600 V blocking capability with moderate current handling up to 10 A. The NPT architecture provides inherent thermal stability, simplifying parallel operation without active current sharing circuits. Consider the 100 µm thickness and sawn-on-foil format when designing the mechanical assembly and thermal interface for the target power module.

Part Context

This part belongs to Infineon's discrete IGBT chip portfolio, specifically engineered for integration into larger power modules rather than standalone PCB mounting. It serves as a fundamental building block for industrial motor drives and inverters where modular construction allows for scalable power density and simplified thermal management strategies.