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Product Detailed Parameters
- Description：IGBT NPT 600V 10A DIE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：10:00 AM
- Current - Collector Pulsed (Icm)：30 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 10A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：29ns/266ns
- Test Condition：400V, 10A, 25Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The SIGC12T60SNC is a 600V NPT (Non-Punch-Through) technology IGBT chip designed for high-power applications. It features a 100µm die size with dimensions of 3.5 x 3.5 mm² and a maximum DC collector current of 10A at Tj=25°C. The device exhibits a typical VCE(sat) of 1.6V at IC=10A and VGE=15V, with a threshold voltage ranging from 3V to 5V. Operating junction temperatures span from -55°C to +150°C, and it supports pulsed currents up to 30A.
Feature Summary
- Utilizes Non-Punch-Through (NPT) technology for robust blocking capabilities
- Features a positive temperature coefficient for safe parallel operation
- Short-circuit proof design enhances system reliability under fault conditions
Applications
- Motor drives
- Power inverters
- Industrial switching systems
Procurement Notes
Verify the specific ordering suffix when sourcing this component. Infineon provides distinct part numbers for sawn-on-foil versus unsawn configurations. Confirming the exact suffix ensures the correct physical state of the bare die is procured for your assembly process.
Selection Notes
Select this chip for designs requiring 600V blocking voltage and moderate current handling around 10A. Its NPT structure offers improved short-circuit ruggedness compared to punch-through variants. Ensure thermal management accommodates the specified operating temperature range up to 150°C.
Part Context
This bare IGBT chip serves as the core semiconductor element within packaged devices like the SGP10N60 TO-220 module. It represents Infineon's standard 600V silicon solution, balancing conduction losses with switching performance for general industrial power electronics.
Replacement Considerations
Direct replacements must match the 600V rating, 10A current capability, and 3.5x3.5mm die size. Verify that alternative chips support NPT technology and compatible metallization for epoxy or soft solder die bonding.
FAQ
What is the recommended storage environment for this chip?
Store in the original container in dry nitrogen at an ambient temperature of 23°C for less than 6 months.
How does the NPT technology benefit paralleling?
The NPT technology provides a positive temperature coefficient, which facilitates easy and stable paralleling of multiple chips without active current balancing.
Is this chip suitable for life-support systems?
No, Infineon components may only be used in life-support devices or systems with express written approval due to safety risks associated with failure.
