SIGC12T60SNCX1SA4

Description：IGBT NPT 600V 10A DIE
Series：-

SKU:015039b4f651 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 10A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：10:00 AM
Current - Collector Pulsed (Icm)：30 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 10A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：29ns/266ns
Test Condition：400V, 10A, 25Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC12T60SNCX1SA4

Overview

The Infineon SIGC12T60SNC is a 600V NPT-technology IGBT chip with a 10A DC collector current rating and a 3.5 x 3.5 mm die size. It features a 100µm thickness, operates within a -55 to +150°C junction temperature range, and includes short-circuit proof capability. The device exhibits a positive temperature coefficient for easy paralleling, with a typical VCE(sat) of 2V at 10A and switching times optimized for inductive loads.

Feature Summary

NPT technology providing short-circuit proof capability
Positive temperature coefficient enabling easy paralleling
Suitable for epoxy and soft solder die bonding

Applications

Drives

Procurement Notes

Verify the specific ordering code (Q67041-A4664-A001 or A002) based on whether sawn-on-foil or unsawn configuration is required. Confirm storage conditions involving dry nitrogen and ambient temperature limits. Ensure electrostatic discharge precautions are applied as the component is sensitive. Validate thermal assembly properties against maximum ratings.

Selection Notes

Select this chip for applications requiring 600V blocking voltage and 10A continuous current handling. Consider its NPT technology for robust short-circuit performance and ease of paralleling due to positive temperature coefficients. Evaluate thermal management requirements to maintain junction temperatures within the specified -55 to +150°C operational range.

Part Context

This component is an IGBT chip manufactured using NPT technology by Infineon Technologies. It serves as the core semiconductor element for power modules like the SGP10N60. The chip is designed for industrial drive applications, offering high reliability through short-circuit proof characteristics and efficient thermal management capabilities.