SIGC12T60SNCX7SA2

SIGC12T60SNCX7SA2

  • Description:IGBT NPT 600V 10A DIE
  • Series:-

SKU:195e72402d3e Category: Brand:

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Product Detailed Parameters

  • Description:IGBT NPT 600V 10A DIE
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):10:00 AM
  • Current - Collector Pulsed (Icm):30 A
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 10A
  • Power - Max:-
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:-
  • Td (on/off) @ 25°C:29ns/266ns
  • Test Condition:400V, 10A, 25Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die
  • Grade:-
  • Qualification:-

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SIGC12T60SNCX7SA2

Overview

The Infineon SIGC12T60SNCX7SA2 is a Silicon Carbide (SiC) Schottky diode belonging to the CoolSiC™ product family. It features a 600 V reverse voltage rating and a continuous forward current of 12 A. The component utilizes a surface-mount TO-263-2LL package, designed for high thermal efficiency and compact integration in power conversion circuits.

Feature Summary

  • Utilizes advanced Silicon Carbide technology for superior performance compared to silicon alternatives
  • Features zero reverse recovery charge to minimize switching losses and electromagnetic interference
  • Engineered with low forward voltage drop characteristics to enhance overall system efficiency

Applications

  • High-frequency DC/DC converters
  • Uninterruptible Power Supplies (UPS)
  • Solar micro-inverters

Procurement Notes

Verify the specific suffix codes against official Infineon documentation to confirm exact packaging quantities and moisture sensitivity levels. Ensure that the ordering part number matches the required temperature grade and tape-and-reel specifications before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high-temperature operation and fast switching speeds. Evaluate the thermal resistance capabilities relative to the PCB layout to ensure adequate heat dissipation. Confirm that the 600 V rating provides sufficient margin for the target circuit's peak voltage stresses.

Part Context

This device is part of Infineon's CoolSiC™ portfolio, which focuses on replacing traditional silicon diodes in high-efficiency power systems. The series supports modern power electronics trends by offering reduced footprint and improved energy conversion rates in demanding industrial and consumer environments.

Replacement Considerations

Consult official cross-reference guides for compatible SiC Schottky diodes with matching 600 V ratings and TO-263 packages. Verify pinout compatibility and thermal characteristics when substituting with other manufacturers' components.

SIGC12T60SNCX7SA2SIGC12T60SNCX7SA2

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