SIGC14T60NCX1SA2

Description：IGBT NPT 600V 15A DIE
Series：-

SKU:004ec6b3938f Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 15A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：15 A
Current - Collector Pulsed (Icm)：45 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 15A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：21ns/110ns
Test Condition：300V, 15A, 18Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC14T60NCX1SA2

Overview

The SIGC14T60NCX1SA2 is a silicon carbide IGBT chip utilizing NPT technology. It features a 100µm thickness and a die size of 3.8 x 3.8 mm². The device supports a collector-emitter voltage of 600V and a DC collector current of 15A at 25°C. It exhibits a positive temperature coefficient for easy paralleling. Maximum ratings include a pulsed collector current of 45A and an operating junction temperature range from -55°C to +150°C.

Feature Summary

Utilizes Non-Punch-Through (NPT) technology for robust performance
Features a positive temperature coefficient enabling easy parallel operation
Designed specifically for integration into IGBT modules

Applications

Industrial motor drives
Power module assembly
Resonant applications

Procurement Notes

Verify the specific ordering code Q67050-A4135-A001 against the datasheet to ensure correct part identification. Confirm that the component meets the required AQL 0.65 visual inspection standards. Ensure storage conditions adhere to the recommendation of dry nitrogen environments with temperatures below 23°C for optimal shelf life preservation.

Selection Notes

Select this chip for designs requiring 600V blocking capability and 15A continuous current handling. The NPT technology provides reliable switching characteristics suitable for inductive loads. Consider the thermal properties of the final assembly, as the DC collector current rating depends on the thermal management solution employed in the module design.

Part Context

This component belongs to Infineon's discrete IGBT chip portfolio, intended for internal use within power modules rather than direct circuit mounting. It serves as a core semiconductor element for high-power conversion systems. The chip is manufactured using advanced silicon processing techniques optimized for industrial voltage classes.