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Product Detailed Parameters
- Description：IGBT NPT 600V 15A DIE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：15 A
- Current - Collector Pulsed (Icm)：45 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 15A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：21ns/110ns
- Test Condition：300V, 15A, 18Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The SIGC14T60NCX1SA3 is a bare IGBT chip utilizing NPT technology with a collector-emitter voltage rating of 600 V. It features a 15 A DC collector current and a 100 µm die thickness. The component exhibits a positive temperature coefficient for easy paralleling. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.5 V at 15 A, a gate-emitter threshold voltage range of 4.5 V to 6.5 V, and an operating junction temperature range from -55 °C to +150 °C.
Feature Summary
- Utilizes Non-Punch-Through (NPT) technology for robust performance
- Features a positive temperature coefficient facilitating parallel operation
- Designed as a bare die for integration into power modules
Applications
- IGBT Modules
- Motor Drives
Procurement Notes
Verify the specific ordering code Q67050-A4135-A001 against the datasheet to ensure correct part identification. Confirm that the application environment supports bare die handling requirements, including storage in dry nitrogen and protection against electrostatic discharge during assembly processes.
Selection Notes
Select this component for designs requiring 600 V blocking capability and 15 A continuous current density. Ensure the module assembly provides adequate thermal management to maintain junction temperatures within the specified limits. Verify compatibility with recommended wire bonding materials and die attachment methods.
Part Context
This component belongs to Infineon's discrete IGBT chip portfolio, specifically engineered for internal use within larger power electronic assemblies. It serves as a fundamental switching element for industrial applications where high reliability and efficient heat dissipation are critical design constraints.
Replacement Considerations
Direct replacements require matching the 600 V rating, 15 A current capacity, and identical die dimensions. Verify that alternative chips share compatible metallization schemes and thermal characteristics to ensure seamless integration into existing module architectures.
