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The SIGC14T60SNC is a 600V NPT technology IGBT chip with a 100µm die size. It features a positive temperature coefficient for easy paralleling and is short-circuit proof. The collector-emitter saturation voltage is typically 1.6V at 15A, with a maximum of 2.5V. Input capacitance is typically 800pF. Operating junction temperature ranges from -55°C to +150°C.
Verify the specific ordering code (Q67041-A4665-A001 or A002) based on whether sawn-on-foil or unsawn configuration is required. Confirm storage conditions in dry nitrogen if applicable. Ensure compatibility with epoxy or soft solder die bonding processes as specified in the mechanical parameters.
Select this chip for applications requiring easy paralleling due to its positive temperature coefficient. Consider the 600V rating and 15A current capability. Evaluate thermal management requirements given the operating temperature range up to 150°C. Verify gate drive voltage compatibility within the ±20V limit.
This component is an IGBT chip used in the SGP15N60 device. It utilizes NPT technology and has a 3.8 x 3.8 mm² die size. The chip is suitable for drives and offers fast turn-off characteristics compared to standard IGBT 2 under comparable conditions.
No public confirmed substitute part numbers are available in the provided documentation.