SIGC14T60SNCX1SA3

Description：IGBT NPT 600V 15A DIE
Series：-

SKU:4032cf25e2f3 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 15A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：15 A
Current - Collector Pulsed (Icm)：45 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 15A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：31ns/261ns
Test Condition：400V, 15A, 21Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC14T60SNCX1SA3

Overview

The SIGC14T60SNC is a 600V NPT technology IGBT chip manufactured by Infineon Technologies. It features a 100µm die size with dimensions of 3.8 x 3.8 mm² and supports a DC collector current of 15A at Tj=25°C. The device exhibits a maximum collector-emitter saturation voltage of 2.5V at 15A, a gate-emitter threshold voltage range of 3V to 5V, and an operating junction temperature range from -55°C to +150°C.

Feature Summary

Utilizes Non-Punch-Through (NPT) technology for robust performance
Features a positive temperature coefficient for safe paralleling
Short-circuit proof capability ensures operational reliability

Applications

Motor drives
Power conversion systems

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm physical state. Suffix A001 indicates sawn-on-foil configuration, while A002 denotes unsawn wafers. Confirm storage requirements strictly adhere to dry nitrogen environments below 23°C for periods under six months to maintain component integrity.

Selection Notes

Select this chip based on its 600V rating and 15A continuous current capacity. Consider the NPT architecture for applications requiring high thermal stability and ease of parallel operation. Ensure the assembly design accommodates the specified 100µm thickness and compatible metallization for epoxy or soft solder die bonding processes.

Part Context

This silicon carbide-free IGBT chip serves as the core semiconductor element within discrete modules like the SGP15N60. It represents Infineon's standard IGBT 2 generation technology, optimized for industrial power electronics where reliable switching and moderate current handling are critical requirements.