SIGC14T60SNCX1SA5

Description：IGBT NPT 600V 15A DIE
Series：-

SKU:2f2f26a6e110 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 15A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：15 A
Current - Collector Pulsed (Icm)：45 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 15A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：31ns/261ns
Test Condition：400V, 15A, 21Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC14T60SNCX1SA5

Overview

The SIGC14T60SNC is a silicon IGBT chip manufactured by Infineon Technologies using Non-Punch-Through (NPT) technology. It features a collector-emitter voltage rating of 600 V and a continuous DC collector current capacity of 15 A at 25°C. The device has a die size of 3.8 x 3.8 mm² with a thickness of 100 µm. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.5 V, a gate-emitter threshold voltage range of 3 V to 5 V, and a maximum operating junction temperature of +150 °C.

Feature Summary

Utilizes Non-Punch-Through (NPT) technology for robust performance
Features positive temperature coefficient characteristics
Designed for easy paralleling in high-current applications
Short-circuit proof capability

Applications

Motor drives
Power conversion systems

Procurement Notes

Verify the specific ordering code required for your assembly process. Infineon offers two variants: Q67041-A4665-A001 for chips sawn on foil and Q67041-A4665-A002 for unsawn chips. Confirm storage requirements, which mandate keeping the component in its original container within dry nitrogen at an ambient temperature of 23°C for no more than six months to maintain quality.

Selection Notes

Select this chip when designing circuits requiring 600 V blocking capability with NPT technology benefits. Ensure the thermal management system supports the specified maximum junction temperature of +150 °C. Consider the package type used in the final module, such as the TO220 configuration found in the SGP15N60 device, to align with the chip's switching and static characteristics.

Part Context

This component is a bare semiconductor die intended for integration into power modules or discrete packages rather than direct PCB mounting. It serves as the core switching element for devices like the SGP15N60 IGBT. The chip utilizes a 150 mm wafer size and includes passivation via photoimide on the front side.