ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT NPT 600V 200A DIE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：200 A
- Current - Collector Pulsed (Icm)：600 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 200A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：180ns/285ns
- Test Condition：300V, 200A, 1.5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
Download product information
Overview
The SIGC156T60NR2C is a 600 V NPT-technology IGBT chip designed for module integration. It features a 100 µm thickness and a die size of 12.5 x 12.5 mm². The component supports a DC collector current of 200 A and a pulsed current of 600 A. Key electrical parameters include a saturation voltage of 1.7 V to 2.5 V at 200 A, an integrated gate resistor of 5 Ω, and a turn-off delay time of 285 ns. Operating junction temperatures range from -55 °C to +150 °C.
Feature Summary
- NPT technology with positive temperature coefficient
- Short circuit proof capability
- Integrated 5 Ω gate resistor
Applications
- IGBT modules
- Drives
Procurement Notes
Verify the specific ordering code Q67050-A4013-A001 against official Infineon documentation to ensure correct part identification. Confirm that the component meets the required thermal properties for your assembly, as the DC collector current depends on these characteristics. Ensure proper handling procedures are followed due to electrostatic discharge sensitivity.
Selection Notes
Select this chip for applications requiring robust short-circuit protection and easy paralleling capabilities. The NPT technology ensures reliable operation across a wide temperature range. Consider the integrated gate resistor when designing the gate drive circuitry to simplify layout and control switching behavior effectively.
Part Context
This component is an IGBT chip manufactured using NPT technology by Infineon Technologies. It is intended for use in power modules rather than standalone discrete applications. The datasheet references the BSM 200 GD 60 DLC Econo Pack 3 device for further electrical context.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum pulsed collector current?
The maximum pulsed collector current is 600 A, limited by the maximum junction temperature.
Is the device sensitive to electrostatic discharge?
Yes, it is classified as an Electrostatic Discharge Sensitive Device according to MIL-STD 883.
What is the recommended storage environment?
Store in the original container in dry nitrogen at an ambient temperature of 23°C for less than 6 months.
