SIGC156T60NR2CX1SA4

Description：IGBT NPT 600V 200A DIE
Series：-

SKU:4b6e84705695 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 200A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：200 A
Current - Collector Pulsed (Icm)：600 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 200A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：180ns/285ns
Test Condition：300V, 200A, 1.5Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC156T60NR2CX1SA4

Overview

The SIGC156T60NR2C is a 600 V NPT-technology IGBT chip designed for integration into power modules. It features a 100 µm die size with a 12.5 x 12.5 mm² raster and supports a DC collector current of 200 A at Tj=25 °C. The component exhibits a typical saturation voltage of 1.7 V at 200 A and includes an integrated gate resistor of 5 Ω. Switching characteristics include a turn-on delay of 180 ns and a fall time of 41 ns under specified inductive load conditions.

Feature Summary

NPT technology providing positive temperature coefficient for easy paralleling
Short circuit proof capability
Integrated 5 Ω gate resistor

Applications

IGBT modules
Drives

Procurement Notes

Verify the specific module integration requirements, as this is a bare chip intended for assembly rather than a standalone discrete component. Confirm thermal management specifications align with the target application's junction temperature limits. Ensure handling procedures account for its classification as an electrostatic discharge sensitive device according to MIL-STD 883 standards.

Selection Notes

Select this chip for applications requiring robust short-circuit withstand capability and simplified parallel operation due to its positive temperature coefficient. The integrated gate resistor aids in controlling switching speed without external components. Verify that the 600 V rating and 200 A current capacity meet the electrical demands of the intended drive or module design.

Part Context

This component is a silicon IGBT chip manufactured using Non-Punch Through (NPT) technology. It serves as the core semiconductor element within larger power electronic assemblies, specifically designed for high-current applications like motor drives. The chip is supplied on foil and requires die bonding and wire bonding processes for final module integration.