SIGC18T60NCX1SA1

Description：IGBT NPT 600V 20A DIE
Series：-

SKU:c223fec096c9 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 20A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：20 A
Current - Collector Pulsed (Icm)：60 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：21ns/110ns
Test Condition：300V, 20A, 13Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC18T60NCX1SA1

Overview

The SIGC18T60NCX1SA1 is a silicon IGBT chip manufactured by Infineon Technologies using Non-Punch-Through (NPT) technology. It features a 100µm die thickness and a collector-emitter voltage rating of 600V. The component supports a DC collector current of 20A at 25°C and a pulsed current of 60A. Operating junction temperatures range from -55°C to +150°C. Key electrical parameters include a saturation voltage of 2.0V typ at 20A, an input capacitance of 900pF, and a turn-off delay time of 110ns.

Feature Summary

Utilizes NPT technology for positive temperature coefficient characteristics.
Facilitates easy paralleling in high-power module designs.
Features epoxy and soft solder compatible metallization systems.

Applications

Industrial motor drives
Variable speed drive modules
High-voltage power switching applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet or certification reports. Ensure storage conditions adhere to the recommended dry nitrogen environment to maintain component integrity prior to assembly.

Selection Notes

Select this component for applications requiring robust short-circuit ruggedness and high controllability. The NPT architecture provides superior thermal stability compared to punch-through technologies. Evaluate the 600V blocking capability and 20A continuous current rating against the specific load requirements of the target power module design.

Part Context

This part belongs to the family of discrete IGBT chips intended for integration into larger power modules rather than standalone circuit boards. It serves as the core semiconductor element within Infineon's power electronics portfolio, specifically engineered for industrial drive systems where high reliability and efficient heat dissipation are critical operational requirements.

Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Cross-reference technical parameters such as VCE(sat), IC ratings, and package compatibility before considering any substitute components.