SIGC18T60NCX1SA4

Description：IGBT NPT 600V 20A DIE
Series：-

SKU:02ef3a832522 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 20A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：20 A
Current - Collector Pulsed (Icm)：60 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：21ns/110ns
Test Condition：300V, 20A, 13Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC18T60NCX1SA4

Overview

The SIGC18T60NCX1SA4 is a silicon IGBT chip manufactured by Infineon Technologies using NPT technology. It features a collector-emitter voltage of 600 V and a DC collector current rating of 20 A at Tj=25 °C. The die size measures 4.3 x 4.3 mm² with a thickness of 100 µm. Key electrical parameters include a saturation voltage (VCE(sat)) of 2.0 V typ. at 20 A, a threshold voltage (VGE(th)) of 5.5 V typ., and a maximum operating junction temperature of +150 °C.

Feature Summary

Utilizes Non-Punch-Through (NPT) technology for robust performance
Features a positive temperature coefficient to facilitate easy paralleling
Designed specifically for integration into IGBT modules

Applications

Industrial motor drives
Power conversion systems
IGBT module manufacturing

Procurement Notes

Verify the component against the official datasheet FS 20 R06 XL4 and the specific chip data sheet SIGC18T60NC. Confirm that the ordering code Q67050-A4139-A001 matches your requirements. Ensure handling procedures account for Electrostatic Discharge sensitivity as per MIL-STD 883 standards during assembly.

Selection Notes

Select this chip for applications requiring 600 V blocking capability and 20 A continuous current handling. The NPT technology provides high thermal stability and ruggedness suitable for industrial environments. Consider the 100 µm thickness and sawn-on-foil packaging when designing the die-bonding process for your specific module architecture.

Part Context

This component is part of Infineon's discrete IGBT chip portfolio designed for power electronics. It serves as the core switching element within larger IGBT modules rather than as a standalone through-hole or surface-mount device. The product line focuses on providing reliable semiconductor solutions for high-power industrial applications.

Replacement Considerations

Consult Infineon documentation for direct substitutes. Verify compatibility regarding die dimensions, metallization types, and electrical characteristics before integrating alternative chips into existing module designs.