SIGC18T60NCX1SA5

Description：IGBT NPT 600V 20A DIE
Series：-

SKU:571bccf9ba00 Category: Single IGBTs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 20A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：20 A
Current - Collector Pulsed (Icm)：60 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：21ns/110ns
Test Condition：300V, 20A, 13Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

Download product information

SIGC18T60NCX1SA5

Overview

The SIGC18T60NCX1SA5 is an IGBT chip manufactured by Infineon Technologies, utilizing NPT (Non-Punch-Through) technology. It features a 600V collector-emitter voltage rating and a 20A DC collector current capability at Tj=25°C. The die size measures 4.3 x 4.3 mm² with a thickness of 100µm. Key electrical parameters include a VCE(sat) of 1.7V to 2.5V at IC=20A and VGE=15V, and a gate-emitter threshold voltage ranging from 4.5V to 6.5V. Operating junction temperature spans -55°C to +150°C.

Feature Summary

Utilizes Non-Punch-Through (NPT) technology for robust performance
Features a positive temperature coefficient for safe operation
Designed for easy paralleling in high-power applications

Applications

Industrial motor drives
Power conversion systems
High-voltage switching modules

Procurement Notes

Verify the component against official Infineon datasheets to confirm technical specifications and authenticity. Ensure compliance with handling guidelines for electrostatic discharge sensitive devices. Confirm that the application environment respects the maximum operating junction temperature limits specified in the documentation.

Selection Notes

Select this chip for designs requiring 600V blocking capability and moderate current handling up to 20A. Consider the thermal properties of the assembly as they directly impact the DC collector current rating. Evaluate the need for paralleling multiple chips due to the device's positive temperature coefficient characteristics.

Part Context

This component belongs to the family of discrete IGBT chips intended for integration into larger power modules. It serves as a fundamental switching element within semiconductor solutions provided by Infineon Technologies, specifically targeting industrial and automotive power electronics sectors.

Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers. Cross-reference electrical ratings and physical dimensions before implementation.