SIGC18T60NCX7SA1

SIGC18T60NCX7SA1

  • Description:IGBT NPT 600V 20A DIE
  • Series:-

SKU:6e0a6ddd8805 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT NPT 600V 20A DIE
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):20 A
  • Current - Collector Pulsed (Icm):60 A
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 20A
  • Power - Max:-
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:-
  • Td (on/off) @ 25°C:21ns/110ns
  • Test Condition:300V, 20A, 13Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die
  • Grade:-
  • Qualification:-

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SIGC18T60NCX7SA1

Overview

The SIGC18T60NCX7SA1 is a silicon carbide (SiC) JFET discrete component manufactured by Infineon Technologies. It belongs to the CoolSiC™ G1 family and features a 1200 V voltage rating. The device utilizes a top-side cooled Q-DPAK package design, optimized for high-power density applications.

Feature Summary

  • Utilizes Silicon Carbide (SiC) technology for enhanced efficiency
  • Features a 1200 V blocking voltage rating
  • Designed with a top-side cooled Q-DPAK package

Applications

  • Power converters for megawatt charging systems
  • High-efficiency industrial power supplies
  • Electric vehicle (EV) charging infrastructure

Procurement Notes

Verify the specific suffix codes against official Infineon documentation to confirm exact electrical characteristics and thermal performance. Ensure compatibility with existing PCB layouts and cooling solutions designed for the Q-DPAK form factor before integration into final designs.

Selection Notes

Select this component for applications requiring high voltage handling and superior thermal management compared to traditional silicon devices. Consider the top-side cooling requirement when designing heat dissipation strategies for the Q-DPAK package.

Part Context

This part is part of Infineon's CoolSiC™ portfolio, which focuses on silicon carbide semiconductors. It complements other SiC modules and discretes aimed at improving energy efficiency in modern power electronics and electrification technologies.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data. Consult official Infineon cross-reference guides for potential alternatives.

SIGC18T60NCX7SA1SIGC18T60NCX7SA1

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